Add: 2F, Building A1, No. 276, E. Baoshi Rd., Baoan District, Shenzhen
Corrosion is an electrochemical process. A small amount of ions exist on the surface of an untreated metal. These ions move from a high potential region (cathode) to a low potential region (anode), and thus generate an electric current. Under the action of this current, it will accelerate the destructive attack on the metal and cause corrosion in the weak part of the metal potential, which is popularly known as rust. CNC milling aluminum die casting part OEM&ODM
1) Compared with the traditional physical enclosure method, the passivation process has the feature of absolutely not increasing the thickness of the workpiece and changing the color, improving the precision and added value of the product, and making the operation more convenient;
2) Since the passivation process is performed in a non-reactive state, the passivation agent can be added and used repeatedly, so that the life is longer and the cost is more economical.
3) Passivation promotes the formation of oxygen molecular structure passivation film on the metal surface, dense film layer, stable performance, and self-repair in the air, so compared with the traditional method of coating rust-proof oil, passivation formed Passivation film is more stable and more corrosion resistant.
Most of the charge effects in the oxide layer are directly or indirectly related to the thermal oxidation process. In the temperature range of 800-1250C, there are three continuous stages of thermal oxidation with dry oxygen, moist oxygen, or water vapor. First, the oxygen in the ambient atmosphere enters into the oxide layer that has formed, and then the oxygen passes through the two layers. The silicon oxide diffuses into the interior and reacts with silicon as it reaches the Si02-Si interface, forming new silica. As a result, the process of oxygen-diffusion-reaction progresses continuously, so that the silicon near the interface continuously transforms into silicon dioxide, and the oxide layer grows to the inside of the silicon wafer at a certain rate.